Zirconia xps peak
![zirconia xps peak zirconia xps peak](https://pubs.rsc.org/image/article/2019/CP/c9cp03322j/c9cp03322j-f4_hi-res.gif)
The films grown at 180 ☌ contain 5–6 at.% of hydrogen and 4–5 at.% chlorine. reported that ZrO 2 films were grown by ALD from ZrCl 4 and H 2O or a mixture of H 2O and H 2O 2 on Si(100) substrates in the temperature range of 180–600 ☌. The relative permittivity measured at 10 kHz was 20–24 in the films deposited at 275–325 ☌. reported that ZrO 2 films were grown from ZrI 4 and H 2O-H 2O 2 on p-Si(100) substrates using ALD technique. Several precursors have been successfully applied for deposition of ZrO 2 films by ALD processes. Among them, atomic layer deposition (ALD) has distinguished advantages over other routes based on saturated self-limiting surface reactions, including thickness controllability, large-area uniformity, low deposition temperature, and structure conformality, which makes ALD play an important role in the fabrication of high-quality dielectric films. In the past decade, ZrO 2 film has been successfully synthesized via vacuum-based vapor-deposition routes and sol-gel solution-deposition routes. In particular, ZrO 2 has been considered as an ideal candidate due to its relatively high dielectric constant and wide band gap, as well as excellent thermal and chemical stability. Recently, alternative metal oxides have been extensively investigated, such as ZrO 2, Ta 2O 5, HfO 2, Nb 2O 5, and TiO 2. However, the use of the traditional SiO 2 comes to its limit due to the scaling of devices, hence it is urgent to develop next generation of gate dielectrics to replace SiO 2 in semiconductor industry. Gate dielectrics have been a continuous research interest due to their broad applications in nano- and microelectronics, such as metal oxide films for complementary metal oxide semiconductors (CMOS) and dynamic random access memory (DRAM). ZrO 2 film exhibits the relatively high dielectric constant of 32.57 at 100 kHz and the low leakage current density of 3.3 × 10 −6 A cm −2 at 1 MV/cm. The growth of the interface layer between ZrO 2 and Si substrate leads to the decrease in the capacitance and the leakage current of dielectric layer in the MIS device after 1000 ☌ annealing. Moreover, the effect of annealing temperature on dielectric properties of ZrO 2 film was studied utilizing ZrO 2-based MIS device. ZrO 2 film begins to crystallize in ALD process above 210 ☌, and the crystal structure is changed from cubic and orthorhombic phases to monoclinic and orthorhombic phases with increasing the deposition temperature to 350 ☌. The ZrO 2 films formed at 200–250 ☌ have an O/Zr atomic ratio of 1.85–1.9 and a low content of carbon impurity. The film thickness can be precisely controlled by regulating the number of ALD cycle. The relatively constant deposition rate of 0.125 nm/cycle is obtained within the ALD temperature window of 200–250 ☌. In this work, ZrO 2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. XPS chemical bonding functional monomer primer zirconia.High- k metal oxide films are vital for the future development of microelectronics technology. These results demonstrated that 4-META and MDP adsorbed to zirconia, whereas the VTD and TMSPMA did not. The / ratio for the surface treated with a carboxylic anhydride (4-methacryloyloxyethyl trimellitate anhydride 4-META) primer was smaller than that treated with MDP. However, the S 2p peak of a triazine dithiol monomer (6-1,3,5-triazine-2,4-dithione VTD) and Si 2p peak of silane (3-trimethoxysilylpropyl methacrylate TMSPMA) were not detected in the spectra of the primed surface.
![zirconia xps peak zirconia xps peak](https://cyberleninka.org/viewer_images/638107/f/1.png)
XPS analysis revealed that phosphorus was incorporated into zirconia when the surface was treated with a primer containing phosphate monomer (10-methacryloyloxydecyl dihydrogen phosphate MDP). Two types of zirconia disks cleaned with piranha solution were treated with one of two phosphate primers (Alloy Primer, Clearfil Ceramic Primer) or a carboxylic primer (Super-Bond C&B Monomer), and rinsed 3 times with acetone. We investigated the chemical interaction between zirconia surfaces and functional monomers using X-ray photoelectron spectroscopy (XPS).